AOT20C60P/aob20c60p 600v,20a n-channel mosfet general description product summary v ds @ t j,max 700v i dm 80a r ds(on),max < 0.26? q g,typ 52nc e oss @ 400v 8.2 m j applications 100% uis tested 100% r g tested package type ? trench power alphamos-ii technology ? low r ds(on) ? low ciss and crss ? high current capability ? general lighting for led and ccfl ? ac/dc power supplies for industrial, consumer, an d telecom orderable part number form minimum order quantity g d s g d s to-220 AOT20C60P to-263 d 2 pak d s g aob20b60p symbol v ds v gs i dm l=1mh i ar e ar e as t j , t stg t l symbol r q ja r q cs r q jc aob20c60pl to-263 green tape & reel 800 a mosfet dv/dt ruggedness peak diode recovery dv/dt maximum c mj 1599 20 thermal characteristics parameter 300 pulsed drain current c 16 t c =25c avalanche current c t c =25c 100 v/ns parameter drain-source voltage AOT20C60Pl to-220 green tube i d a 20 80 200 gate-source voltage v 1000 600 absolute maximum ratings t a =25c unless otherwise noted t c =100c continuous drain current repetitive avalanche energy c single pulsed avalanche energy g 20 derate above 25 c p d 463 w w/c 30 v maximum units maximum case-to-sink a c/w 0.5 c units junction and storage temperature range -55 to 150 maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds power dissipation b mj dv/dt 3.7 c/w c/w maximum junction-to-ambient a,d maximum junction-to-case 65 0.27 rev.2.0: january 2015 www.aosmd.com page 1 of 6
symbol min typ max units 600 700 bv dss / ?tj 0.54 v/ o c 1 10 i gss 100 na v gs(th) gate threshold voltage 3 3.8 5 v r ds(on) 0.225 0.26 ? g fs 20 s v sd 0.7 1 v i s 20 a i sm 80 a c iss 3607 pf c oss 140 pf c o(er) 95 pf c o(tr) 182 pf c rss 3.3 pf r g 2 ? q g 52 80 nc q gs 20 nc m a v ds =480v, t j =125c maximum body-diode pulsed current c effective output capacitance, energy related h effective output capacitance, time related i v gs =0v, v ds =100v, f=1mhz v gs =0v, v ds =0 to 480v, f=1mhz v ds =0v, v gs =30v gate-body leakage current v gs =10v, v ds =480v, i d =20a total gate charge gate source charge switching parameters i d =250a, v gs =0v, t j =150c breakdown voltage temperature coefficient i d =250a, v gs =0v i dss zero gate voltage drain current v ds =600v, v gs =0v electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions gate resistance f=1mhz static drain-source on-resistance bv dss drain-source breakdown voltage i d =250a, v gs =0v, t j =25c v reverse transfer capacitance v ds =5v , i d =250 m a output capacitance forward transconductance i s =1a,v gs =0v v ds =40v, i d =10a v gs =10v, i d =10a v gs =0v, v ds =100v, f=1mhz maximum body-diode continuous current input capacitance diode forward voltage dynamic parameters gs q gd 14 nc t d(on) 77 ns t r 67 ns t d(off) 120 ns t f 43 ns t rr 599 ns q rr 11 m c this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. gate drain charge body diode reverse recovery charge body diode reverse recovery time i f =20a,di/dt=100a/ m s,v ds =100v turn-off delaytime turn-off fall time v gs =10v, v ds =300v, i d =20a, r g =25 w i f =20a,di/dt=100a/ m s,v ds =100v turn-on rise time turn-on delaytime a. the value of r q ja is measured with the device in a still air environm ent with t a =25 c. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150 c, ratings are based on low frequency and duty cycl es to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedance from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. l=60mh, i as =7.3a, v dd =150v, r g =25 ?, starting t j =25 c. h. c o(er) is a fixed capacitance that gives the same stored e nergy as c oss while v ds is rising from 0 to 80% v (br)dss. i. c o(tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v (br)dss. rev.2.0: january 2015 www.aosmd.com page 2 of 6
typical electrical and thermal characteristics 0 0.1 0.2 0.3 0.4 0.5 0 10 20 30 40 50 r ds(on) ( w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage 0 0.5 1 1.5 2 2.5 3 -100 -50 0 50 100 150 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature v gs =10v i d =10a v gs =10v 0 10 20 30 40 50 0 5 10 15 20 25 30 i d (a) v ds (volts) figure 1: on-region characteristics v gs =5.5v 6v 6.5v 10v 7v 0.1 1 10 100 2 4 6 8 10 i d (a) v gs (volts) figure 2: transfer characteristics - 55 c v ds =40v 25 c 125 c 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 1e+02 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics 25 c 125 c 0.7 0.8 0.9 1 1.1 1.2 1.3 -100 -50 0 50 100 150 200 bv dss (normalized) t j (c) figure 5: break down vs. junction temperature rev.2.0: january 2015 www.aosmd.com page 3 of 6
typical electrical and thermal characteristics 0 3 6 9 12 15 0 15 30 45 60 75 90 v gs (volts) q g (nc) figure 7: gate-charge characteristics 1 10 100 1000 10000 0.1 1 10 100 1000 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =480v i d =20a 0 5 10 15 20 25 0 25 50 75 100 125 150 current rating i d (a) t case ( c) figure 10: current de-rating (note f) 0 4 8 12 16 20 0 100 200 300 400 500 600 eoss(uj) v ds (volts) figure 9: coss stored energy e oss 0.01 0.1 1 10 100 1 10 100 1000 i d (amps) v ds (volts) figure 11: maximum forward biased safe operating area for to-220/to-263 green (note f) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s rev.2.0: january 2015 www.aosmd.com page 4 of 6
typical electrical and thermal characteristics 0.001 0.01 0.1 1 10 1e-06 1e-05 0.0001 0.001 0.01 0.1 1 10 100 z q jc normalized transient thermal resistance pulse width (s) figure 12: normalized maximum transient thermal imp edance for to-220/to-263 green (note f) d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =0.27 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p dm rev.2.0: january 2015 www.aosmd.com page 5 of 6
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off l bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar vdd vgs id vgs rg dut - + vdc vgs vds id vgs bv i ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss di/dt i rm rr vdd vdd q = - idt ar t rr rev.2.0: january 2015 www.aosmd.com page 6 of 6
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